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Search for "boron doping" in Full Text gives 7 result(s) in Beilstein Journal of Nanotechnology.
Ultrasensitive detection of cadmium ions using a microcantilever-based piezoresistive sensor for groundwater
Beilstein J. Nanotechnol. 2020, 11, 1242–1253, doi:10.3762/bjnano.11.108
- vapor deposition (LPCVD) furnace at 630 °C and boron doping (1018 per cm3) is carried out using ion implantation at 35 keV. The upper SiO2 layer is formed by re-oxidizing the polysilicon in an oxidation furnace [40]. The stiffness (k) of the fabricated piezoresistive sensor measured using AFM is 131–146
Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate
Beilstein J. Nanotechnol. 2018, 9, 1282–1287, doi:10.3762/bjnano.9.120
- structural properties similar to those of tetraethyl orthosilicate (TEOS, Si(C2H5O)4), which has been well characterized as a precursor for EBID of silica films [14]. TMB has previously been used for boron doping of SiO2 [15] and diamond [16], and the deposition of BCN fibres [17], BN nanotubes [18] and BN
Two-dimensional carbon-based nanocomposites for photocatalytic energy generation and environmental remediation applications
Beilstein J. Nanotechnol. 2017, 8, 1571–1600, doi:10.3762/bjnano.8.159
- following sections of this article. g-C3N4-oxide/sulfide nanocomposites Jing et al. [145] reported the cocatalyst-free boron-doped g-C3N4–TiO2 (BCN-T) nanocomposite for H2 generation from CH3OH under visible light irradiation. The boron doping in g-C3N4 nanosheets introduces the impurity near to the VB top
- level, which traps holes and hence the photoinduced electrons were transferred from the CB of g-C3N4 to the CB of TiO2 as per their band potentials (Figure 10), which further leads to the photocatalytic reaction for fuel production. Hence the synergetic effect of boron doping and heterojunction
Carbon-based smart nanomaterials in biomedicine and neuroengineering
Beilstein J. Nanotechnol. 2014, 5, 1849–1863, doi:10.3762/bjnano.5.196
- applications, boron doping of ND [134][135] has often been considered to bestow ND metallic properties, thus enabling superior S/N performances in the detection of neuronal activity and a wider electrochemical window for electrical stimulation. Ariano et al. [128] developed a ND-based device in order to record
Sublattice asymmetry of impurity doping in graphene: A review
Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133
- ]. Boron doping alone has shown to also open a band gap, tunable with dopant concentration [34][35]. This method results in small B–N domains embedded in the graphene sheet, so the precise mechanism behind the band gap opening may not be the same as that seen in a random B–N ensemble. Although these gaps
Neutral and charged boron-doped fullerenes for CO2 adsorption
Beilstein J. Nanotechnol. 2014, 5, 413–418, doi:10.3762/bjnano.5.49
- calculations to simulate the CO2 adsorption. The results show that CO2 can form weak interactions with the BC59 cage in its neutral state and the interactions can be enhanced significantly by introducing an extra electron to the system. Keywords: adsorption; boron doping; CO2 capture; density functional
- results of Guo et al. [13] showed that boron doping creates an electron defficient site at the B atom. This suggests that an additional electron added to the system will be accepted by the B atom. This hypothesis is consistent with theoretical predictions of Kurita et al. [17] and Xie et al. [35], who
Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure
Beilstein J. Nanotechnol. 2014, 5, 329–336, doi:10.3762/bjnano.5.37
- the circumstances, the hybrid structures with dopants exhibit low Young’s moduli. However, for GNHS-0.5%N and GNHS-3.5%N, the Young’s modulus is even higher than that of the pristine GNHS, which are 0.292 TPa and 0.295 TPa, respectively. Figure 9b shows that increase of boron doping results in a sharp
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